Modeling Advanced Magnetoresistive Memories
Viktor Sverdlov, IMN, TÜ Wien, Austria
Viktor Sverdlov obtained his Master of Science and PhD degrees in physics from the State University of St. Petersburg, Russia, in 1985 and 1989, respectively. From 1989 to 1999, he worked as a senior research scientist at the V.A. Fock Institute of Physics at the same university. Throughout his career, he has visited several notable institutions, including the ICTP in Italy (1993), the University of Geneva in Switzerland (1993-1994), the University of Oulu in Finland (1995), the Helsinki University of Technology in Finland (1996, 1998), the Free University of Berlin in Germany (1997), and NORDITA in Denmark (1998).
In 1999, he became a staff research scientist at the State University of New York at Stony Brook. In 2004, he joined the Institute for Microelectronics at Technische Universität Wien, where he is currently an associate professor and the director of the Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic. His scientific interests include device simulations, computational physics, solid-state physics, and nanoelectronics.