The International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) provides an international forum for the presentation of leading-edge research and development results in the area of process and device simulation. SISPAD is one of the longest-running conferences devoted to technology computer-aided design (TCAD) and advanced modeling of novel semiconductor devices and nano electronic structures. SISPAD2025 will be held in-person in Grenoble, France, from September 24 to 26, 2025.
A satellite workshop will be offered on the day before the main conference starts (September 23).
Details on the SISPAD 2025 technical program and workshop will be announced here as soon as they are available.
 
We hope to see you in Grenoble, France in September.
 
SISPAD 2025 Committee

 

• Modeling and simulation of all types of semiconductor devices, including FinFETs, GAA FETs, ultra-thin SOI devices, emerging memory devices, new material-based nanodevices, optoelectronic devices, TFTs, sensors, power electronic devices, spintronic devices, tunnel FETs, SETs, organic electronic devices, and bioelectronic devices;
• Modeling and simulation of all sorts of semiconductor processes, including first principles material design, and growth simulation of nano-scale fabrication;
• Fundamental aspects of device modeling and simulation, including quantum transport, thermal transport, fluctuation, noise, and reliability;
• Compact modeling for circuit simulation, including low-power, high frequency, and power electronics applications;
• Process/device/circuit co-simulation in context with system design and verification;
• Equipment, topography, lithography modeling;
• Interconnect modeling, including noise and parasitic effects;
• Numerical methods and algorithms, including grid generation, user-interface, and visualization;
• Metrology for the modeling of semiconductor devices and processes;
• Multiscale approach from First Principles to TCAD simulations;
• Artificial intelligence, Neural Network, Differentiable programming;
• Neuromorphic devices and quantum computing;
• Multi-physics simulation.